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Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Abstract : Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 µm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 µs, 5 %) operation was obtained at room temperature for 35 µm-diameter devices with threshold current of 85 mA.
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Submitted on : Monday, May 4, 2009 - 9:39:33 AM
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Arnaud Ducanchez, Laurent Cerutti, Pierre Grech, Frédéric Genty, Eric Tournié. Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm. Electronics Letters, IET, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩. ⟨hal-00380609⟩



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