Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

Christophe Longeaud; Jean-Paul Kleider; P. Kaminski; R. Kozlowski; M. Miczuga

Journal articles

Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

Christophe Longeaud ¹ Jean-Paul Kleider ¹ P. Kaminski R. Kozlowski M. Miczuga

1 LGEP - Laboratoire de génie électrique de Paris

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Journal articles

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https://hal-supelec.archives-ouvertes.fr/hal-00445958
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Submitted on : Monday, January 11, 2010 - 4:15:27 PM
Last modification on : Monday, December 14, 2020 - 12:28:40 PM

Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

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Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

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