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Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique

Christophe Longeaud 1 Jean-Paul Kleider 1 P. Kaminski R. Kozlowski M. Miczuga
1 LGEP - Laboratoire de génie électrique de Paris
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Contributor : Olivier Schneegans <>
Submitted on : Monday, January 11, 2010 - 4:15:27 PM
Last modification on : Friday, December 14, 2018 - 1:26:24 AM

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  • HAL Id : hal-00445958, version 1

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Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski, M. Miczuga. Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21, pp. 045801-045815. ⟨hal-00445958⟩

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