Metal-organic vapor phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Simon Gautier , Gaëlle Orsal , Tarik Moudakir , N. Maloufi , François Jomard , Marc Alnot , Zakaria Djebbour (1, 2) , Andrei Sirenko , M. Abid , K. Pantzas , Ian Ferguson , Paul L. Voss , Abdallah Ougazzaden

1 LGEP - Laboratoire de génie électrique de Paris
2 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines

BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.

Mots clés: Metal-organic vapour phase epitaxy; BInGaN; Boron; InGaN

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Simon Gautier, Gaëlle Orsal, Tarik Moudakir, N. Maloufi, François Jomard, et al.. Metal-organic vapor phase epitaxy of BInGaN quaternary alloys and characterization of boron content. Journal of Crystal Growth, 2010, 312 (5), pp.641-644. ⟨10.1016/j.jcrysgro.2009.11.040⟩. ⟨hal-00554242⟩