Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending

Caspar Leendertz; N. Mingirulli; T.F. Schulze; Jean-Paul Kleider; Bernd Rech; Lars Korte

Conference papers

Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending

Caspar Leendertz N. Mingirulli T.F. Schulze Jean-Paul Kleider ¹ Bernd Rech Lars Korte

1 LGEP - Laboratoire de génie électrique de Paris

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Conference papers

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https://hal-supelec.archives-ouvertes.fr/hal-00555253
Contributor : Olivier Schneegans <>
Submitted on : Wednesday, January 12, 2011 - 5:23:19 PM
Last modification on : Tuesday, June 15, 2021 - 4:23:33 PM

Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending

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Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending

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