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ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
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Conference papers
Low Temperature Transparent ITO-based Contacts for Mid-IR Applications
Abstract : In this work, thin films of Indium Tin Oxide (ITO)-based materials were tested as potential candidates for mid-IR transparent contacts on Te-doped GaSb and Si-doped InAs semiconductor wafers. Since these contacts are devoted to be inserted in Sb-based devices which are generally MBE-grown at ~450°C, low-temperature fabrication processes were particularly tested with a maximum temperature of annealing of 400°C. 50 nm-thick ITO films were deposited on glass, Te-doped GaSb and Si-doped InAs wafers and resistivity of 8.10-4 Ω.cm combined with ~80% of transmittance at 2 μm and ohmic contacts with a specific resistance of 3.10-4 Ω.cm2 were obtained. Then, in order to improve these properties in the mid-IR, other ITO-based materials were tested: In doped ZnO (IZO) and Zn doped ITO (ITZO). The first results obtained on these materials show that the insertion of 10% of Zn in classical ITO structure results in a degradation of the electrical properties of the layer without a real impact on its optical transmittance near 2 μm. Concerning IZO, a large improvement of the transmittance in the whole visible-mid-IR wavelength range was observed for annealed samples at a temperature as low as 350°C. However, the electrical resistivity appears very sensible to the temperature of annealing.
https://hal-supelec.archives-ouvertes.fr/hal-00652277
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Thursday, December 15, 2011 - 11:17:02 AM
Last modification on : Sunday, October 17, 2021 - 3:02:11 AM
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Thursday, December 15, 2011 - 11:17:02 AM
Last modification on : Sunday, October 17, 2021 - 3:02:11 AM