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Conductive-probe atomic force microscopy characterization of silicon nanowires

Abstract : The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
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Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Thursday, June 21, 2012 - 3:29:18 PM
Last modification on : Thursday, June 17, 2021 - 3:49:30 AM



José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, et al.. Conductive-probe atomic force microscopy characterization of silicon nanowires. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.110. ⟨10.1186/1556-276X-6-110⟩. ⟨hal-00710727⟩



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