Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Vanessa Gorge (1, 1) , Zakaria Djebbour (1, 1) , Anne Migan-Dubois (1, 1) , Christelle Pareige (1) , Christophe Longeaud (1, 1) , K. Pantzas (2) , T. Moudakir (2) , Simon Gautier (3) , Gaëlle Orsal (3) , P.L. Voss (2) , A. Ougazzaden (2)

1 LGEP - Laboratoire de génie électrique de Paris
2 Georgia Tech Lorraine [Metz]
3 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.

Domaines: Physique [physics]

Vanessa Gorge, Zakaria Djebbour, Anne Migan-Dubois, Christelle Pareige, Christophe Longeaud, et al.. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films. Applied Physics Letters, 2011, 99 (6), pp.062113. ⟨10.1063/1.3624598⟩. ⟨hal-00710730⟩