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Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Abstract : We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.
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https://hal-supelec.archives-ouvertes.fr/hal-00710730
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Submitted on : Thursday, June 21, 2012 - 3:29:26 PM
Last modification on : Wednesday, September 16, 2020 - 5:37:57 PM

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Vanessa Gorge, Zakaria Djebbour, Anne Migan-Dubois, Christelle Pareige, Christophe Longeaud, et al.. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films. Applied Physics Letters, American Institute of Physics, 2011, 99 (6), 062113 (3 p.). ⟨10.1063/1.3624598⟩. ⟨hal-00710730⟩

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