Influence of Ga content on defects in CuInxGa1−xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Abstract : In this work, we investigate the influence of gallium content on the defects properties of co-evaporated CuInxGa1 − xSe2 by subgapmodulatedphotocurrentspectroscopy and admittancespectroscopy techniques. A series of CuInxGa1 − xSe2basedsolarcells with different gallium content in the range from 0% to 33%, and with the same CdS buffer layer have been investigated. On one hand, photocurrentspectroscopy results show 2 types of defects named D1 and D2, and on the other hand, admittancespectroscopy results exhibit only one type of defect. I-V curves show that one of the two defects probed by photocurrent is responsible of the dominant recombination mechanisms next to the heterointerface, between the absorber and the buffer layers. Moreover, I-V curves under AM 1.5 conditions show that the cell with no probed D2 defect presents the best photovoltaic performances.
Document type :
Journal articles
Complete list of metadatas

https://hal-supelec.archives-ouvertes.fr/hal-00710731
Contributor : Olivier Schneegans <>
Submitted on : Thursday, June 21, 2012 - 3:29:28 PM
Last modification on : Monday, December 17, 2018 - 1:25:54 AM

Identifiers

Citation

Jaafar Serhan, Zakaria Djebbour, Denis Mencaraglia, F. Couzinié-Devy, Nicolas Barreau, et al.. Influence of Ga content on defects in CuInxGa1−xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy. Thin Solid Films, Elsevier, 2011, 519 (21), pp.7312-7316. ⟨10.1016/j.tsf.2011.01.095⟩. ⟨hal-00710731⟩

Share

Metrics

Record views

187