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Towards a better understanding of resistance drift and threshold switching phenomena in amorphous phase change materials : study of GeTe versus Ge15Te85

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https://hal-supelec.archives-ouvertes.fr/hal-00710760
Contributor : Olivier Schneegans <>
Submitted on : Thursday, June 21, 2012 - 3:52:43 PM
Last modification on : Wednesday, October 21, 2020 - 2:01:23 PM

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  • HAL Id : hal-00710760, version 1

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Jennifer Luckas, Martin Salinga, Christophe Longeaud, Matthias Wuttig. Towards a better understanding of resistance drift and threshold switching phenomena in amorphous phase change materials : study of GeTe versus Ge15Te85. ICANS24, Aug 2011, Nara, Japan. ⟨hal-00710760⟩

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