High-Power, Low RIN 1.55-μm Directly Modulated DFB Lasers for Analog Signal Transmission

Mickael Faugeron 1 Michaël Tran 2 François Lelarge 2 Mourad Chtioui 2 Yannick Robert 2 Eric Vinet 2 Alain Enard 2 Joël Jacquet 1 Frederic van Dijk 2
1 OPTEL - Equipe Optique et électronique pour les télécoms
2 III-V Lab - Alcatel-Thalès III-V lab
Abstract : We report the demonstration of high-power and low relative intensity noise (RIN) directly modulated distributed feedback lasers at 1.55 μm. We have developed a structure with asymmetrical cladding to reduce internal losses due to the p-doped upper cladding. We obtain an output power of 140 mW at 550 mA and an RIN below −157 dB/Hz in the 0.1-20 GHz range along with a high side-mode suppression ratio (>55 dB). The modulation bandwidth was larger than 7 GHz. The characteristics of these lasers, namely a high electrical to optical conversion efficiency (0.340 W/A at 350 mA), low noise, high power (98 mW at 350 mA), and linearity, make them the perfect candidates for high gain, high dynamic directly modulated analog links.
Keywords : 1.5-μm lasers directly modulated lasers distributed feedback lasers high-power diode lasers low noise lasers
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Journal articles
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https://hal-supelec.archives-ouvertes.fr/hal-00731221
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Submitted on : Wednesday, September 12, 2012 - 12:14:22 PM
Last modification on : Wednesday, June 26, 2019 - 1:16:02 PM

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Mickael Faugeron, Michaël Tran, François Lelarge, Mourad Chtioui, Yannick Robert, et al.. High-Power, Low RIN 1.55-μm Directly Modulated DFB Lasers for Analog Signal Transmission. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2012, 24 (2), pp.116-118. ⟨10.1109/LPT.2011.2173479⟩. ⟨hal-00731221⟩

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