Micro-macro modelling of stress-dependent anisotropic magnetoresistance

A Bartók (1) , Laurent Daniel (1) , A Razek (1)

1 LGEP - Laboratoire de génie électrique de Paris

Anisotropic magnetoresistance (AMR) is the basic phenomenon of a spread class of sensors. AMR effect has a strong mechanical stress dependence. Micromagnetic simulations are often used for modeling the magnetoresistance of ferromagnetic materials, but these approaches do not allow to investigate macroscopic effects (for example behavior of a polycrystal under stress) due to the high number of interactions and degrees of freedom. On the other hand macroscopic phenomenological approaches fail in describing the main role of microstructure on the effective behavior. In this work a micro-macro model is proposed to describe the effect of stress on the AMR in ferromagnetic polycrystals. Results are discussed and compared to experimental data from the literature.

Mots clés: 73.43.Qt; 75.80.+q; 75.30.Gw; 75.60.-d

Domaines: Sciences de l'ingénieur [physics]

A Bartók, Laurent Daniel, A Razek. Micro-macro modelling of stress-dependent anisotropic magnetoresistance. Journal of Physics D: Applied Physics, 2011, 44 (13), pp.135001. ⟨10.1088/0022-3727/44/13/135001⟩. ⟨hal-00606296⟩