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Schottky photodiode using submicron thick diamond epilayer for flame sensing

Abstract : The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 eV, exhibiting an intrinsic solar-blindness for deep-ultraviolet (DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of -10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light.
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Contributor : Olivier Schneegans Connect in order to contact the contributor
Submitted on : Monday, December 10, 2012 - 12:03:21 PM
Last modification on : Thursday, June 17, 2021 - 3:48:40 AM

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Y. Koide, M. Liao, José Alvarez, M. Imura, K. Sueishi, et al.. Schottky photodiode using submicron thick diamond epilayer for flame sensing. Nano-micro Letters, OAHOST, 2009, 1 (1), pp.30-33. ⟨10.5101/nml.v1i1.p30-33⟩. ⟨hal-00763202⟩



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