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High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth

Mickael Faugeron 1 Michaël Tran 2 Olivier Parillaud 3 Mourad Chtioui 2 Yannick Robert 2 Eric Vinet 2 Alain Enard 2 Joël Jacquet 1 Frederic van Dijk 2
1 OPTEL - Equipe Optique et électronique pour les télécoms
2 III-V Lab - Alcatel-Thalès III-V lab
3 Thales Research and Technology [Palaiseau]
Abstract : We have developed a 1-mm-long high-power DFB laser using an asymmetrical cladding based on the dilute waveguide technique. We have obtained about 180 mW output power at 25 °C and >30 mW at 15 °C-85 °C chip temperature with >55-dB sidemode suppression ratio. This temperature range allows a 9.7-nm wavelength tunability. For high output power, the relative intensity noise is lower than −160 dB/Hz in the 0.08-40-GHz frequency range and the optical linewidth is better than 300 kHz.
Keywords : 1.5 μm distributed feedback lasers high-power diode lasers low relative intensity noise (RIN) narrow linewidth
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Journal articles
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https://hal-supelec.archives-ouvertes.fr/hal-00772368
Contributor : Sébastien van Luchene <>
Submitted on : Thursday, January 10, 2013 - 1:54:58 PM
Last modification on : Wednesday, April 8, 2020 - 3:31:52 PM

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Mickael Faugeron, Michaël Tran, Olivier Parillaud, Mourad Chtioui, Yannick Robert, et al.. High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2013, 25 (1), pp.7-10. ⟨10.1109/LPT.2012.2225419⟩. ⟨hal-00772368⟩

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