Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements

Renaud Varache 1 Wilfried Favre 1 Lars Korte Jean-Paul Kleider 1
1 SCM - Equipe Semiconducteurs en Couches Minces
LGEP - Laboratoire de génie électrique de Paris
Abstract : We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. The model assumes an exponential band tail for the defect distribution in a-Si:H. The effects of the different parameters involved in the calculation are investigated in detail, such as the Fermi level position in a-Si:H, the density of states and the band offsets. The calculation was used to interpret temperature dependent planar conductance measurements carried out on (n) a-Si:H/ (p) c-Si and (p) a-Si:H/(n) c-Si structures, which allowed us to confirm a previous evaluation of the conduction band offset, ∆EC = 0.18 ± 0.05 eV, and to evaluate the valence band offset: ∆EV = 0.36 ± 0.05 eV at the a-Si:H/ c-Si heterojunction. The results are placed in the frame of recent publications.
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Submitted on : Monday, January 21, 2013 - 3:44:17 PM
Last modification on : Monday, December 17, 2018 - 1:27:01 AM

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Renaud Varache, Wilfried Favre, Lars Korte, Jean-Paul Kleider. Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2236-2240. ⟨10.1016/j.jnoncrysol.2011.11.023⟩. ⟨hal-00778951⟩

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