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Characterization of thin polycrystalline silicon films deposited on glass by CVD

Abstract : We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870 °C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.
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Contributor : Olivier Schneegans <>
Submitted on : Monday, January 21, 2013 - 3:44:19 PM
Last modification on : Tuesday, December 15, 2020 - 4:03:27 AM

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A.G. Benvenuto, R.H. Buitrago, Ayana Badhuri, Christophe Longeaud, J. A. Schmidt. Characterization of thin polycrystalline silicon films deposited on glass by CVD. Semiconductor Science and Technology, IOP Publishing, 2012, 27 (12), pp.125013. ⟨10.1088/0268-1242/27/12/125013⟩. ⟨hal-00778962⟩



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