a-Si:H transport parameters from experiments based on photoconductivity

Christophe Longeaud (1) , J. A. Schmidt

1 LGEP - Laboratoire de génie électrique de Paris

In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.

Christophe Longeaud, J. A. Schmidt. a-Si:H transport parameters from experiments based on photoconductivity. Journal of Non-Crystalline Solids, 2012, 358 (17), pp.2052-2056. ⟨10.1016/j.jnoncrysol.2011.11.018⟩. ⟨hal-00781747⟩