Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures

Abstract : Photo-thermal deflection technique is used to study the nonradiative recombination process in laser structures Ga0.7In0.3As0.23Sb0.77 and Al0.7Ga0.3As0.08Sb0.92 grown by molecular beam epitaxy on GaSb substrate. A two layer theoretical model has been developed, taking into account both thermal and electronic contributions in the photothermal signal; the coincidence between experimental curves giving the normalized amplitude and phase variations versus square root modulation frequency to the corresponding theoretical ones permits to determine non-radiative lifetime, electronic diffusivity, and surface and interface recombination velocities.
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https://hal-supelec.archives-ouvertes.fr/hal-00924736
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Submitted on : Tuesday, January 7, 2014 - 10:33:05 AM
Last modification on : Thursday, March 7, 2019 - 11:34:08 AM

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Soufiene Ilahi, Nourreddine Yacoubi, Frédéric Genty. Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures. Journal of Applied Physics, American Institute of Physics, 2013, 113 (18), pp.183705. ⟨10.1063/1.4803513⟩. ⟨hal-00924736⟩

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