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ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
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Journal articles
Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers
Abstract : Photothermal deflection spectroscopy is used in order to investigate near- and sub-band gap absorption of Si-doped GaSb epilayers deposited by MBE on a semi-insulating GaAs substrate. The optical absorption spectra show an extra absorption on the transparency region below the bandgap due to free-carrier absorption. However, for energies above the gap, we notice a linear behavior of the square root of the absorption coefficient versus the heating beam energy, which is attributed to phonon-assisted absorption. From interpolation of the phonon absorption to low energies we have determined the free-carrier absorption that is found to follow the Drude law.
https://hal-supelec.archives-ouvertes.fr/hal-00924740
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Tuesday, January 7, 2014 - 10:39:28 AM
Last modification on : Sunday, October 17, 2021 - 3:02:47 AM
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Tuesday, January 7, 2014 - 10:39:28 AM
Last modification on : Sunday, October 17, 2021 - 3:02:47 AM
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