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ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
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Journal articles
Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation
Abstract : The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si (ψc-Si) in Transparent Conductive Oxide (TCO)/a-Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes ψc-Si and reduces the influence of the TCO on Voc.
https://hal-supelec.archives-ouvertes.fr/hal-00931269
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Wednesday, January 15, 2014 - 11:06:26 AM
Last modification on : Thursday, June 17, 2021 - 3:46:15 AM
Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Wednesday, January 15, 2014 - 11:06:26 AM
Last modification on : Thursday, June 17, 2021 - 3:46:15 AM