Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation

Renaud Varache 1 Jean-Paul Kleider 1 Marie-Estelle Gueunier-Farret 1 Lars Korte
1 SCM - Equipe Semiconducteurs en Couches Minces
LGEP - Laboratoire de génie électrique de Paris
Abstract : The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si (ψc-Si) in Transparent Conductive Oxide (TCO)/a-Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes ψc-Si and reduces the influence of the TCO on Voc.
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Journal articles
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https://hal-supelec.archives-ouvertes.fr/hal-00931269
Contributor : Thierry Leblanc <>
Submitted on : Wednesday, January 15, 2014 - 11:06:26 AM
Last modification on : Tuesday, October 8, 2019 - 3:20:10 PM

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Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation. Materials Science and Engineering: B, Elsevier, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩. ⟨hal-00931269⟩

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