Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas

Abstract : The epitaxial lateral overgrowth of microscale GaAs crystals on a 0.6 nm thick SiO2 layer from nanoscale Si seeds is investigated in order to develop GaAs monolithic hetero-epitaxy onto (001) Si. The nucleation from small width openings enables to avoid the emission of misfit dislocations and the formation of antiphase domains. Consequently, the interface between the GaAs island and the SiO2 layer remains perfectly sharp and free of defects. The only defects found by transmission electron microscopy in each island are pairs of twins, and a simple model based on the anisotropy of zinc blende crystal is proposed to explain their formation. Micro-photoluminescence measurements performed at room temperature show that these twins are not detrimental for the quality of microscale GaAs crystals.
Document type :
Journal articles
Complete list of metadatas

https://hal-supelec.archives-ouvertes.fr/hal-00931275
Contributor : Thierry Leblanc <>
Submitted on : Wednesday, January 15, 2014 - 11:06:32 AM
Last modification on : Friday, November 1, 2019 - 1:24:49 AM

Identifiers

Citation

Charles Renard, N. Cherkasin, Alexandre Jaffré, Laetitia Vincent, A. Michel, et al.. Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas. Applied Physics Letters, American Institute of Physics, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩. ⟨hal-00931275⟩

Share

Metrics

Record views

206