RF power influence on structural and electrical properties of µc-Si1-xCx:H

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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00931310
Contributor : Thierry Leblanc <>
Submitted on : Wednesday, January 15, 2014 - 11:29:52 AM
Last modification on : Tuesday, May 14, 2019 - 11:03:48 AM

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  • HAL Id : hal-00931310, version 1

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Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, Pavel Bulkin, et al.. RF power influence on structural and electrical properties of µc-Si1-xCx:H. EUPVSEC 2013, Sep 2013, Paris, France. ⟨hal-00931310⟩

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