µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications

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https://hal-supelec.archives-ouvertes.fr/hal-00931311
Contributor : Thierry Leblanc <>
Submitted on : Wednesday, January 15, 2014 - 11:29:52 AM
Last modification on : Tuesday, May 14, 2019 - 11:03:40 AM

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  • HAL Id : hal-00931311, version 1

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Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, et al.. µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications. E-MRS Fall Meeting 2013, Sep 2013, Warsaw, Poland. ⟨hal-00931311⟩

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