Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets

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Contributor : Thierry Leblanc <>
Submitted on : Wednesday, January 15, 2014 - 11:29:53 AM
Last modification on : Tuesday, May 14, 2019 - 11:03:32 AM

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  • HAL Id : hal-00931318, version 1

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Olga Maslova, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret, José Alvarez, Wilfried Favre, et al.. Temperature and Bias Dependence of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Capacitance: The Link to Band Bending and Band Offsets. ICANS 25, Aug 2013, Toronto, Canada. ⟨hal-00931318⟩

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