Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects

Abstract : On the basis of a home-made nanoscale impedance measurement device associated with a commercial atomic force microscope, a specific operating process is proposed in order to improve absolute (in sense of “nonrelative”) capacitance imaging by drastically reducing the parasitic effects due to stray capacitance, surface topography, and sample tilt. The method, combining a two-pass image acquisition with the exploitation of approach curves, has been validated on sets of calibration samples consisting in square parallel plate capacitors for which theoretical capacitance values were numerically calculated.
Type de document :
Article dans une revue
Applied Physics Letters, American Institute of Physics, 2014, 104 (8), pp.083108. 〈10.1063/1.4866607〉
Liste complète des métadonnées

https://hal-supelec.archives-ouvertes.fr/hal-01093500
Contributeur : Thierry Leblanc <>
Soumis le : mercredi 10 décembre 2014 - 17:02:56
Dernière modification le : vendredi 7 décembre 2018 - 01:27:23

Identifiants

Citation

Ivan Estevez, Pascal Chrétien, Olivier Schneegans, Frédéric Houzé. Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects. Applied Physics Letters, American Institute of Physics, 2014, 104 (8), pp.083108. 〈10.1063/1.4866607〉. 〈hal-01093500〉

Partager

Métriques

Consultations de la notice

109