GaN nanowires for piezoelectric generators

Noelle Gogneau 1 Pascal Chrétien 2 Elisabeth Galopin 1 Stephane Guilet Laurent Travers 3 Jean-Christophe Harmand 4 Frédéric Houzé 2
1 LPN - Laboratoire de photonique et de nanostructures
2 LGEP - Laboratoire de génie électrique de Paris
3 LCC - Laboratoire de chimie de coordination
4 LBE - Laboratoire de Biotechnologie de l'Environnement [Narbonne]
Abstract : We demonstrate the high potential of GaN nanowires (NWs) to convert mechanical energy into electric energy. Using an atomic force microscope equipped with a Resiscope module, an average output voltage of –74 mV and a maximum of –443 mV ± 2% per NW were measured. This latter value is the highest reported so far for GaN NWs. By considering these output signals, we have estimated an average and a maximum power density generated by one layer of GaN NWs of the order of 5.9 mW/cm2 and 130 mW/cm2, respectively. These results offer promising prospects for the use of GaN NWs for high-efficiency ultracompact piezogenerators.
Type de document :
Article dans une revue
physica status solidi (RRL) - Rapid Research Letters, Wiley-VCH Verlag, 2014, 8 (5), pp.414-419. 〈10.1002/pssr.201409105〉
Liste complète des métadonnées
https://hal-supelec.archives-ouvertes.fr/hal-01093504
Contributeur : Thierry Leblanc <>
Soumis le : mercredi 10 décembre 2014 - 17:07:20
Dernière modification le : jeudi 21 mars 2019 - 14:23:51

Lien texte intégral

istex

Identifiants

Collections

SUPELEC | SUP_CE | INRA | SUP_LGEP | UPMC | INC-CNRS | AGROPOLIS | UNIV-TLSE3 | GEEPS | PHEMADIC | SORBONNE-UNIVERSITE | SU-SCIENCES

Citation

Noelle Gogneau, Pascal Chrétien, Elisabeth Galopin, Stephane Guilet, Laurent Travers, et al.. GaN nanowires for piezoelectric generators. physica status solidi (RRL) - Rapid Research Letters, Wiley-VCH Verlag, 2014, 8 (5), pp.414-419. 〈10.1002/pssr.201409105〉. 〈hal-01093504〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

232

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD