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Impact of the GaN nanowire polarity on energy harvesting

Abstract : We investigate the piezoelectric generation properties of GaN nanowires (NWs) by atomic force microscopy equipped with a Resiscope module for electrical measurements. By correlating the topography profile of the NWs with the recorded voltage peaks generated by these nanostructures in response to their deformation, we demonstrate the influence of their polarity on the rectifying behavior of the Schottky diode formed between the NWs and the electrode of measurement. These results establish that the piezo-generation mechanism crucially depends on the structural characteristics of the NWs.
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Contributor : Thierry Leblanc Connect in order to contact the contributor
Submitted on : Wednesday, December 17, 2014 - 5:39:55 PM
Last modification on : Thursday, June 17, 2021 - 3:48:52 AM



Noelle Gogneau, Pascal Chrétien, Elisabeth Galopin, Stephane Guilet, Laurent Travers, et al.. Impact of the GaN nanowire polarity on energy harvesting. Applied Physics Letters, American Institute of Physics, 2014, 104 (21), pp.213105. ⟨10.1063/1.4880101⟩. ⟨hal-01096617⟩



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