Improvement of the quality of graphene-capped InAs/GaAs quantum dots

Riadh Othmen Kamel Rezgui Antonella Cavanna 1 Hakim Arezki 2 Fethullah Gunes 3 Hosni Ajlani Ali Madouri 1 Meherzi Oueslati 4
1 LPN - Laboratoire de photonique et de nanostructures
2 LGEP - Laboratoire de génie électrique de Paris
3 Department of Energy Science
4 Laboratoire de Spectroscopie Raman
Abstract : In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.
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Article dans une revue
Journal of Applied Physics, American Institute of Physics, 2014, 115 (21), pp.214309. 〈10.1063/1.4880338〉
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https://hal-supelec.archives-ouvertes.fr/hal-01099355
Contributeur : Thierry Leblanc <>
Soumis le : vendredi 2 janvier 2015 - 22:16:41
Dernière modification le : samedi 15 décembre 2018 - 01:29:03

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Riadh Othmen, Kamel Rezgui, Antonella Cavanna, Hakim Arezki, Fethullah Gunes, et al.. Improvement of the quality of graphene-capped InAs/GaAs quantum dots. Journal of Applied Physics, American Institute of Physics, 2014, 115 (21), pp.214309. 〈10.1063/1.4880338〉. 〈hal-01099355〉

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