Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

José Alvarez 1 M. Boutchich 1 Jean-Paul Kleider 1 T. Teraji 2 Y. Koide 2
1 LGEP - Laboratoire de génie électrique de Paris
2 NIMS - National Institute for Materials Science
Abstract : The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited (TFL) current as the main conduction mechanism favoring the leakage current in the Schottky devices.
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Article dans une revue
Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (35), pp.355102. 〈10.1088/0022-3727/47/35/355102〉
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Contributeur : Thierry Leblanc <>
Soumis le : dimanche 4 janvier 2015 - 19:59:21
Dernière modification le : vendredi 16 novembre 2018 - 01:45:18

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José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (35), pp.355102. 〈10.1088/0022-3727/47/35/355102〉. 〈hal-01099593〉

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