 |
ECOLE SUPÉRIEURE D'ÉLECTRICITÉ Une grande école d'ingénieurs au cœur des sciences de l'information,de l'énergie et des systèmes |
 |
Journal articles
Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging
Abstract : The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited (TFL) current as the main conduction mechanism favoring the leakage current in the Schottky devices.
https://hal-supelec.archives-ouvertes.fr/hal-01099593
Contributor : Thierry Leblanc <>
Submitted on : Sunday, January 4, 2015 - 7:59:21 PM
Last modification on : Wednesday, April 14, 2021 - 3:41:09 AM
Contributor : Thierry Leblanc <>
Submitted on : Sunday, January 4, 2015 - 7:59:21 PM
Last modification on : Wednesday, April 14, 2021 - 3:41:09 AM
Links full text
