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Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets

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https://hal-supelec.archives-ouvertes.fr/hal-01099596
Contributor : Thierry Leblanc <>
Submitted on : Sunday, January 4, 2015 - 8:08:52 PM
Last modification on : Wednesday, September 16, 2020 - 4:45:27 PM

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O. Maslova, A. Brézard-Oudot, M.E. Gueunier-Farret, J. Alvarez, W. Favre, et al.. Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets. Canadian Journal of Physics, NRC Research Press, 2014, 92 (7/8), pp.690-695. ⟨10.1139/cjp-2013-0544⟩. ⟨hal-01099596⟩

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