Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys

Abstract : In the search for a material with electrical properties similar to those of amorphous silicon or amorphous silicon germanium, but stable under light soaking, hydrogenated microcrystalline silicon–carbon alloy (µc-Si1 − xCx:H) thin films are a promising candidate. The interest in these materials lies in the possibility of varying the effective band gap by changing the amount of carbon in the alloy composition, while keeping a high crystalline fraction to maintain stability under light-soaking. In this study, µc-Si1 − xCx:H thin films were deposited by radio frequency (RF) plasma enhanced chemical vapour deposition using a silane and methane gas mixture highly diluted in hydrogen. Three deposition parameters were investigated as a means to control the film crystallinity: the RF power density, the methane flow rate and the presence of a small amount of silicon tetrafluoride in the gas mixture. Although all three parameters can result in materials with a Raman crystalline volume fraction above 50%, it is shown that they result in very different microstructures, as evidenced by x-ray diffraction and scanning transmission electron microscopy analyses. A growth model is proposed to explain the influence of each of these parameters on the final film structure.
Type de document :
Article dans une revue
Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (45), pp.455102. 〈10.1088/0022-3727/47/45/455102〉
Liste complète des métadonnées

https://hal-supelec.archives-ouvertes.fr/hal-01104321
Contributeur : Thierry Leblanc <>
Soumis le : vendredi 16 janvier 2015 - 15:16:44
Dernière modification le : lundi 21 mai 2018 - 01:13:29

Identifiants

Collections

Citation

S Gaiaschi, R Ruggeri, M-E Gueunier-Farret, E V Johnson. Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (45), pp.455102. 〈10.1088/0022-3727/47/45/455102〉. 〈hal-01104321〉

Partager

Métriques

Consultations de la notice

66