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Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD

Abstract : Two sets of hydrogenated microcrystalline silicon carbon alloys were deposited by standard radio frequency (RF) plasma enhanced chemical vapor deposition at a substrate temperature of 175 °C. The effect of the methane flow rate and of the RF-power were investigated. Samples were deposited from a silane and methane gas mixture, highly diluted in hydrogen. The increase in methane flow rates leads to a decrease of the crystalline volume fraction and an increase in carbon incorporation. On the other hand, decreasing the RF-power shifts the microcrystalline-to-amorphous transition at higher methane flow rates. Moreover, for similar amount of carbon incorporated, the decrease in RF-power leads to materials showing higher crystalline volume fraction and average grains sizes. Both ion bombardment energy and carbon incorporation contributes to the microstructural properties of the deposited alloys.
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https://hal-supelec.archives-ouvertes.fr/hal-01104328
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Submitted on : Friday, January 16, 2015 - 3:19:34 PM
Last modification on : Wednesday, September 16, 2020 - 4:45:28 PM

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Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Erik V. Johnson. Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD. physica status solidi (c), Wiley, 2014, 11 (11-12), pp.1665-1668. ⟨10.1002/pssc.201400034⟩. ⟨hal-01104328⟩

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