Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)

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https://hal-supelec.archives-ouvertes.fr/hal-01104492
Contributor : Thierry Leblanc <>
Submitted on : Friday, January 16, 2015 - 7:07:46 PM
Last modification on : Wednesday, October 23, 2019 - 11:14:03 PM

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  • HAL Id : hal-01104492, version 1

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Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4. ⟨hal-01104492⟩

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