Doping and characterization of trilayer graphene on 4H-SiC (0001)

Mohamed Boutchich 1 Hakim Arezki 1 David Alamarguy 1 K.I. Ho Haikel Sediri Fethullah Gunes 2 José Alvarez 1 Jean-Paul Kleider 1 C.S. Lai A. Ouerghi 3
1 LGEP - Laboratoire de génie électrique de Paris
2 Department of Energy Science
3 LPN - Laboratoire de photonique et de nanostructures
Document type :
Conference papers
Complete list of metadatas
https://hal-supelec.archives-ouvertes.fr/hal-01104494
Contributor : Thierry Leblanc <>
Submitted on : Friday, January 16, 2015 - 7:19:01 PM
Last modification on : Wednesday, October 23, 2019 - 11:14:03 PM

Identifiers

  • HAL Id : hal-01104494, version 1

Collections

SUPELEC | SUP_SCM | SUP_LGEP | CNRS | UPMC | PHEMADIC | GEEPS | SORBONNE-UNIVERSITE | SU-SCIENCES

Citation

Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. ⟨hal-01104494⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

145

Contact

CCSD