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AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template

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https://hal-supelec.archives-ouvertes.fr/hal-01108899
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Friday, January 23, 2015 - 4:04:39 PM
Last modification on : Wednesday, November 3, 2021 - 8:36:08 AM

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  • HAL Id : hal-01108899, version 1

Citation

Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Pierre Disseix, et al.. AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template. 17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland. pp.Mon-Poster-0-28. ⟨hal-01108899⟩

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