MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Abstract : Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.
Type de document :
Communication dans un congrès
ICMOVPE 2014, Jul 2014, Lausanne, Switzerland. Proceedings of the 17th International Conference on MetalOrganic Vapour Phase Epitaxy, pp.1-4, 2014, Journal of Crystal Growth. 〈10.1016/j.jcrysgro.2014.09.030〉
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https://hal-supelec.archives-ouvertes.fr/hal-01109542
Contributeur : Sébastien Van Luchene <>
Soumis le : lundi 26 janvier 2015 - 15:17:57
Dernière modification le : jeudi 5 avril 2018 - 12:30:21

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Xin Li, Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. ICMOVPE 2014, Jul 2014, Lausanne, Switzerland. Proceedings of the 17th International Conference on MetalOrganic Vapour Phase Epitaxy, pp.1-4, 2014, Journal of Crystal Growth. 〈10.1016/j.jcrysgro.2014.09.030〉. 〈hal-01109542〉

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