E. Tournié and L. Cerutti, Mid-infrared optoelectronics: materials, devices, and applications, 2020.

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy et al., Interband cascade lasers, Journal of Physics D: Applied Physics, vol.48, issue.12, p.123001, 2015.

E. F. Schubert, T. Gessmann, and J. K. Kim, Light Emitting Diodes, 2005.

. Kirk-othmer, Biotechnology, 2000.

L. Coldren, H. Temkin, and C. Wilmsen, , 1999.

, Simple Design Consideration of Vertical Cavity Surface Emitting Lasers, Analysis and Design of Vertical Cavity Surface Emitting Lasers, pp.47-84, 2005.

S. Böttger, M. Köhring, U. Willer, and W. Schade, , 2013.

S. Böttger, M. Köhring, U. Willer, and W. Schade, Off-beam quartz-enhanced photoacoustic spectroscopy with LEDs, Applied Physics B, vol.113, issue.2, pp.227-232, 2013.

E. F. Schubert, Y. ?. Wang, A. Y. Cho, L. ?. Tu, and G. J. Zydzik, Resonant cavity light?emitting diode, Applied Physics Letters, vol.60, issue.8, pp.921-923, 1992.

A. M. Green, D. G. Gevaux, C. Roberts, and C. C. Phillips, Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared, Physica E: Low-dimensional Systems and Nanostructures, vol.20, issue.3-4, pp.531-535, 2004.

C. Grasse, P. Wiecha, T. Gruendl, S. Sprengel, R. Meyer et al., InP-based 2.8?3.5 ?m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures, Applied Physics Letters, vol.101, issue.22, p.221107, 2012.
URL : https://hal.archives-ouvertes.fr/hal-02484130

A. Ducanchez, L. Cerutti, A. Gassenq, P. Grech, and F. Genty, Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 ?m and Including a Tunnel Junction, IEEE Journal of Selected Topics in Quantum Electronics, vol.14, issue.4, pp.1014-1021, 2008.
URL : https://hal.archives-ouvertes.fr/hal-01616283

A. Craig, A. Noori, Y. Lu, Q. Marshall, A. Krier et al., Phys. Lett, vol.114, p.171103

J. L. Bradshaw, R. L. Tober, J. D. Bruno, R. P. Leavitt, K. M. Lascola et al., Wavelength beam combined quantum cascade lasers for IRCM, Laser Technology for Defense and Security V, 2009.

G. Pham, J. Towner, and F. , SPIE Defense, Security, and Sensing, vol.766, p.376630, 2010.

S. Arafin, A. Bachmann, K. Vizbaras, A. Hangauer, J. Gustavsson et al., Comprehensive analysis of electrically-pumped GaSb-based VCSELs, Optics Express, vol.19, issue.18, p.17267, 2011.

G. K. Veerabathran, S. Sprengel, A. Andrejew, and M. Amann, GaSb-based Electrically-Pumped Vertical Cavity Surface Emitting Lasers for the 3-4 ?m Wavelength Range, Conference on Lasers and Electro-Optics, 2017.

M. Amann, Appl. Phys. Lett, vol.110, p.71104, 2017.

D. Sanchez, L. Cerutti, and E. Tournié, Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser, Optics Express, vol.20, issue.14, p.15540, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01619625

Y. Laaroussi, G. Almuneau, A. Rumeau, C. Tourte, C. Levallois et al., Oxide-confined mid-infrared VCSELs, Electronics Letters, vol.48, issue.25, pp.1616-1618, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00788447

H. Gebretsadik and H. , Electron. Lett, vol.34, p.3, 1998.

M. Jalonen, M. Toivonen, J. Ko?nga?s, A. Salokatve, and M. Pessa, Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy, Electronics Letters, vol.33, issue.23, p.1989, 1997.

D. A. Díaz-thomas, O. Stepanenko, M. Bahriz, S. Calvez, E. Tournié et al., Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm, Optics Express, vol.27, issue.22, p.31425, 2019.

A. Perona, A. Garnache, L. Cerutti, A. Ducanchez, S. Mihindou et al., AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm, Semiconductor Science and Technology, vol.22, issue.10, pp.1140-1144, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00327771

I. Vurgaftman, LAZAROU ET AL. v. MORAROS ET AL, International Law Reports, vol.2, pp.585-587

Y. Laaroussi, G. Almuneau, D. Sanchez, and L. Cerutti, Efficient lateral confinement by an oxide aperture in a mid-infrared GaSb-based vertical light-emitting source, Journal of Physics D: Applied Physics, vol.44, issue.14, p.142001, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00608426

A. E. Bond, P. D. Dapkus, and J. D. O'brien, Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers, IEEE Photonics Technology Letters, vol.10, issue.10, pp.1362-1364, 1998.

J. Boucart, F. Gaborit, C. Fortin, L. Goldstein, J. Jacquet et al., Optimization of the metamorphic growth of GaAs for long wavelength VCSELs, Journal of Crystal Growth, vol.201-202, pp.1015-1019, 1999.

J. Leifer and K. , Journal of Crystal Growth, pp.201-202, 1999.

D. Deppe, D. Huffaker, T. Oh, and H. Deng,

Q. Deng, IEEE Journal of Selected Topics in Quantum Electronics, IEEE J. Select. Topics Quantum Electron

G. Almuneau, R. Bossuyt, P. Collière, L. Bouscayrol, M. Condé et al., Real-timein situmonitoring of wet thermal oxidation for precise confinement in VCSELs, Semiconductor Science and Technology, vol.23, issue.10, p.105021, 2008.

Y. Ou, J. S. Gustavsson, P. Westbergh, A. Haglund, A. Larsson et al., Impedance Characteristics and Parasitic Speed Limitations of High-Speed 850-nm VCSELs, IEEE Photonics Technology Letters, vol.21, issue.24, pp.1840-1842, 2009.

M. M. Dummer, K. Johnson, M. Hibbs-brenner, and W. K. Hogan, Implant confined 1850nm VCSELs, Vertical-Cavity Surface-Emitting Lasers XVI, 2012.

W. Hogan and . Opto, , vol.8276, p.82760, 2012.

C. Kim, 2017 List of Reviewers, Optical Engineering, vol.57, issue.01, p.1, 2018.