Experimental Bifurcation Diagram and Terminal Voltage Change of an External-cavity Semiconductor Laser

Byungchil Kim , Nianqiang Li , A. A Sahai , A. Locquet (1) , D. S Citrin

1 Georgia Tech Lorraine [Metz]

We present for the first time experimental bifurcation diagrams of an externalcavity semiconductor laser using the photodetected optical intensity and the laser diode terminal voltage and interpret them on the basis of the Lang and Kobayashi model.

Domaines: Sciences de l'ingénieur [physics]

Byungchil Kim, Nianqiang Li, A. A Sahai, A. Locquet, D. S Citrin. Experimental Bifurcation Diagram and Terminal Voltage Change of an External-cavity Semiconductor Laser. CLEO: Applications and Technology, 2014, San Jose, United States. pp.JW2A.105, ⟨10.1364/CLEO_AT.2014.JW2A.105⟩. ⟨hal-03085265⟩