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. Pour-compléter-cette-Étude, sur des échantillons de l'ordre de 3 nm déposés à 430°C, sous un flux de 1700 et 3000 sccm d'oxygène. Nous avons vu, dans le chapitre II paragraphe III-B, que la méthode d'ellipsométrie spectroscopique permet d'accéder à des informations sur la structure et la composition du HfO 2 . Les parties réelles et imaginaires de la fonction diélectrique ? sont tracées en fonction de l'énergie des photons pour les deux échantillons (figure III 13) Pour simuler les spectres, un modèle à deux Tauc-Lorentz a été utilisé, Cette méthode permet d'obtenir les paramètres optiques relatifs au matériau

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. Si, solide) + O 2 (gaz ) SiO 2 (solide

. La-vitesse-d-'attaque-du, SiO 2 dans cette solution a été mesurée à 7 nm/min (à 23 °C) Par cette technique

S. Le-nettoyage, Standard Clean 1) s'effectue par immersion du substrat de silicium dans un bain de pH 9