Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: Matrix structure and porogen loading influences, Journal of Applied Physics, vol.102, issue.6, p.64107, 2007. ,
DOI : 10.1063/1.2783963
The Transistor, A Semiconductor Triode, Proceedings of the IEEE, vol.86, issue.1, p.230, 1948. ,
DOI : 10.1109/JPROC.1998.658753
Cramming more components onto integrated circuits, pp.114-117, 1965. ,
Progress in digital integrated electronics, IEEE Text Speech, 1975. ,
Speed limitations due to interconnect time constants in VLSI integrated circuits, Electron Device Letters, pp.90-92, 1982. ,
Process integration and manufacturing issues for high performance interconnect, MRS Symp. Proc. Adv. Metallization for Devices and Circuits, pp.25-31, 1994. ,
Introduction to Solid State Physics, 1986. ,
Theory of Electric Polarization, Journal of The Electrochemical Society, vol.121, issue.6, 1978. ,
DOI : 10.1149/1.2402382
Dielectric relaxation in solids, Journal of Physics D: Applied Physics, vol.32, issue.14, 1984. ,
DOI : 10.1088/0022-3727/32/14/201
Introduction to Ceramics, Journal of The Electrochemical Society, vol.124, issue.3, 1976. ,
DOI : 10.1149/1.2133296
Effective medium models for the optical properties of inhomogeneous materials, Applied Optics, vol.20, issue.1, pp.26-30, 1981. ,
DOI : 10.1364/AO.20.000026
Structural study of nanoporous ultra low-k dielectrics using complementary techniques: Ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering, Applied Surface Science, vol.254, issue.2, pp.473-479, 2007. ,
DOI : 10.1016/j.apsusc.2007.06.043
URL : https://hal.archives-ouvertes.fr/hal-00206321
Plasma deposition of inorganic films, Solid State Technology, pp.135-139, 1983. ,
Low???temperature deposition of high???quality silicon dioxide by plasma???enhanced chemical vapor deposition, Journal of Applied Physics, vol.60, issue.9, p.3136, 1986. ,
DOI : 10.1063/1.337726
Sol-gel technology for thin films, fibers, preforms, electronics and specialty shapes, 1987. ,
The search for low and ultra low dielectrics: how far can you get with polymers ?, Electrical Insulation Magazine, IEEE, vol.20, issue.2, pp.6-17, 2004. ,
Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric, Material Research Society Symposium Proceeding, p.9, 1997. ,
DOI : 10.1002/pen.10635
Cationic polymerization of bis(1- alkylvinyl)benzenes and related monomers-synthesos of monomers with long alkyl side chains, Die Makromolekulare Chemie, vol.192, issue.12, p.3071, 1991. ,
DOI : 10.1002/macp.1991.021921222
Integration of a stack of two flourine doped silicon oxide thin films with interconnect metallization for a sub-0.35 µm inter-metal dielectric application, Microelectronic Engineering, vol.37, issue.38, pp.261-269, 1997. ,
Dielectrics in electric fields, 2003. ,
DOI : 10.1201/9780203912270
Characterization of Carbon-Doped SiO[sub 2] Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane, Journal of The Electrochemical Society, vol.148, issue.7, p.148, 2001. ,
DOI : 10.1149/1.1375797
Physical and Electrical Characteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides, Journal of The Electrochemical Society, vol.148, issue.6, p.127, 2001. ,
DOI : 10.1149/1.1369373
Si???O???C???H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.18, issue.4, p.1216, 2000. ,
DOI : 10.1116/1.582328
Permittivity and Conductivity of Low-Dielectric-Constant SiOC:H Films Deposited by Plasma-Enhanced Chemical Vapor Deposition, Journal of The Electrochemical Society, vol.150, issue.3, p.47, 2003. ,
DOI : 10.1149/1.1545467
Material research society fall meeting tutorial: low materials, Material Research Society Symposium Proceeding, 1996. ,
Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials, Journal of The Electrochemical Society, vol.151, issue.6, pp.146-52, 2004. ,
DOI : 10.1149/1.1731520
Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below, Microelectronic Engineering, vol.76, issue.1-4, pp.1-7, 2004. ,
DOI : 10.1016/j.mee.2004.07.012
Advanced 300 mm cu/CVD LK(k=2.2) mulilevel damascene integration for 90/65 nm generation BEOL interconnect technologies, IEEE Symposium on VLSI Technology. Digest of technical papers, pp.105-106, 2003. ,
DOI : 10.1109/vlsit.2003.1221108
Total porogen extraction by supercritical carbon dioxide to produce porous ULK thin film, Advanced Metallization Conference proceedings, pp.317-323, 2005. ,
Supercritical carbon dioxide process to improve dielectric and mechanical properties of porous ULK thin films, Material Research Society Symposium Proceeding, pp.2-08, 2006. ,
H 2 plasma as porogen removal treatment to perform porous ULK, in Meet, Abstr. -Electrochem. Soc, vol.604, p.370, 2006. ,
Porosity generation using hydrogen plasma assisted thermal curing for ultra low k material, Microelectronic Engineering, vol.85, issue.10 ,
DOI : 10.1016/j.mee.2008.04.044
URL : https://hal.archives-ouvertes.fr/hal-00466188
Single wafer RapidCuring T M of porous low-k materials, Interconnect Technology Conference, Proceedings of the IEEE, pp.226-228, 2002. ,
Thermal furnace and Ultraviolet assisted curing impact on SiOCH spin-on ultra low dielectric constant materials, Thin Solid Films, vol.516, issue.6, pp.1097-1103, 2008. ,
DOI : 10.1016/j.tsf.2007.05.010
Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H, Journal of The Electrochemical Society, vol.154, issue.5, p.103, 2007. ,
DOI : 10.1149/1.2667980
URL : https://hal.archives-ouvertes.fr/hal-00206318
A charge damage study using an electron beam low k treatment, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), p.190, 2004. ,
DOI : 10.1109/IITC.2004.1345740
Templating Nanoporosity in Thin-Film Dielectric Insulators, Advanced Materials, vol.10, issue.13, pp.1049-1053, 1998. ,
DOI : 10.1002/(SICI)1521-4095(199809)10:13<1049::AID-ADMA1049>3.0.CO;2-F
Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization, Journal of Applied Physics, vol.94, issue.10, p.6697, 2003. ,
DOI : 10.1063/1.1618358
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects, ADMETA proceeding, 2006. ,
Ultra low K PECVD porogen approach: matrix precursors comparison and porogen removal treatment study, Materials, Technology and Reliability for Advanced Interconnects?2005, pp.49-54, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00077998
Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k< 2, Material Research Society Symposium Proceeding, 2003. ,
Porogen precursors for ULK (K<2.2) PECVD dielectrics, Advanced Metalization Conference Proceeding, 2006. ,
Properties of mesoporous low-k MSSQ film prepared using macromolecular porogen, Proc. MRS Advanced Metallization Conference, 2001. ,
Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties, Thin solid films, vol.495, pp.124-129, 2006. ,
The effect of deposition temperature on the structure and electrical properties of low-k film using Diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition, Thin Solid Films, vol.516, issue.2-4, pp.2-4, 2007. ,
DOI : 10.1016/j.tsf.2007.08.070
interconnect materials, Journal of Applied Physics, vol.93, issue.3, p.1785, 2003. ,
DOI : 10.1063/1.1534628
Si-C 2 H 4 -Si network formation for improvement of PECVD SiOC:H film properties, pp.106-113, 2006. ,
Analysis of Silicones, 1974. ,
Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties, Thin Solid Films, vol.495, issue.1-2, pp.124-129, 2006. ,
DOI : 10.1016/j.tsf.2005.08.291
URL : https://hal.archives-ouvertes.fr/hal-00140224
In Situ Characterization of Methylsilsesquioxane Curing, Journal of The Electrochemical Society, vol.145, issue.11, pp.4007-4011, 1998. ,
DOI : 10.1149/1.1838905
Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition, Journal of Applied Physics, vol.90, issue.5, p.2469, 2001. ,
DOI : 10.1063/1.1388861
Low-k dielectrics -nanostructures and process effects on reliability, Material Research Society Symposium Proceeding, 2007. ,
Einleitung in die höhere, Optik, p.1882 ,
Semiconductor silicon, 1973. ,
Electrochemichal society, inc, Extended abstracts, 1992. ,
Mechanisms of plasma polymerization of various silico-organic monomers, Thin solid films, pp.28-37, 1994. ,
Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices, Advanced Materials for Optics and Electronics, vol.6, issue.2, pp.55-72, 1996. ,
DOI : 10.1002/(SICI)1099-0712(199603)6:2<55::AID-AMO226>3.0.CO;2-J
The deposition of thin films by the decomposition of tetra-ethoxy silane in a radio frequency glow discharge, Thin Solid Films, vol.14, issue.1, pp.105-118, 1972. ,
DOI : 10.1016/0040-6090(72)90373-2
Silicone compounds register and review, 1987. ,
Vers les matériaux à très faible constante diélectrique: étude des mécanismes réactionnels des dépôts plasma d'organosiliciés, thèse de l'Institut National Polytechnique de Grenoble, 2005. ,
Film Characterization of Ultra Low-k Dielectrics Modified by UV Curing with Different Wavelength Bands, Material Research Society Symposium Proceeding, pp.1-06, 2006. ,
DOI : 10.1557/PROC-0914-F01-06
Optimization of SiCOH dielectrics for integration in a 90nm CMOS technology, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), pp.54-56, 2004. ,
DOI : 10.1109/IITC.2004.1345682
???SiC:H, Journal of Applied Physics, vol.69, issue.11, p.7805, 1991. ,
DOI : 10.1063/1.347509
The role of ultraviolet radiation during ultralow k films curing: Strengthening mechanisms and sacrificial porogen removal, Journal of Applied Physics, vol.102, issue.9, p.94107, 2007. ,
DOI : 10.1063/1.2805451
URL : https://hal.archives-ouvertes.fr/hal-00463070
CRC Handbook of chemistry and physics, Boca Raton, 1987. ,
Improvement of Mechanical Properties of Porous SiOCH films by Post-cure Treatments, Proc. MRS Advanced Metallization Conference, 2005. ,
Chemically Bonded Porogens in Methylsilsesquioxane, Journal of The Electrochemical Society, vol.149, issue.12, p.161, 2002. ,
DOI : 10.1149/1.1515281
Chemical Bonding Structure of Low Dielectric Constant Si:O:C:H Films Characterized by Solid-State NMR, Journal of The Electrochemical Society, vol.152, issue.1, p.7, 2005. ,
DOI : 10.1149/1.1830353
Synthesis of Polycarbosilane/Siloxane Hybrid Polymers and Their Pyrolytic Conversion to Silicon Oxycarbide Ceramics, Chemistry of Materials, vol.9, issue.11, pp.2434-2441, 1997. ,
DOI : 10.1021/cm970316e
dielectrics by physical vapor deposition Ta(N) thin films, Journal of Applied Physics, vol.92, issue.3, p.1548, 2002. ,
DOI : 10.1063/1.1487907
films by plasma enhanced chemical vapor deposition, Applied Physics Letters, vol.68, issue.6, p.832, 1996. ,
DOI : 10.1063/1.116548
Reasons for lower dielectric constant of fluorinated SiO2 films, Journal of Applied Physics, vol.83, issue.4, p.2172, 1998. ,
DOI : 10.1063/1.366955
Estimation of the dielectric properties of low-k materials using optical spectroscopy, Applied Physics Letters, vol.79, issue.14, p.2231, 2001. ,
DOI : 10.1063/1.1408607
Novel Method of Estimating Dielectric Constant for Low-k Materials, Japanese Journal of Applied Physics, vol.41, issue.Part 2, No. 3B, pp.307-310, 2002. ,
DOI : 10.1143/JJAP.41.L307
Introduction to Molecular Spectroscopy, 1962. ,
Adsorption by Powders and Porous Solids: Principles, Methodology and Applications, 1999. ,
On the equilibrium of vapor pressure at a curved surface of liquid, Proc. Roy. Soc. Edinb, pp.63-68, 1870. ,
Some new tour parameter models for moisture sorption isotherms, Dokl. Akad. Nauk SSSR, vol.55, p.327, 1947. ,
Nuclear Magnetic Resonance Spectra from a Crystal rotated at High Speed, Nature, vol.2, issue.4650, p.1659, 1958. ,
DOI : 10.1103/PhysRev.74.1168
Heteronuclear decoupling in rotating solids, The Journal of Chemical Physics, vol.103, issue.16, p.6951, 1995. ,
DOI : 10.1063/1.470372
Principles of high resolution NMR in solids, 1983. ,
DOI : 10.1007/978-3-642-68756-3
Nuclear Double Resonance in the Rotating Frame, Physical Review, vol.128, issue.5, pp.2042-2053, 1962. ,
DOI : 10.1103/PhysRev.128.2042
A review of nanoindentation continuous stiffness measurement technique and its applications, Materials Characterization, vol.48, issue.1, pp.11-36, 2002. ,
DOI : 10.1016/S1044-5803(02)00192-4
Adaptive Protocol for Robust Estimates of Coatings Properties by Nanoindentation, Material Research Society Symposium Proceeding, pp.73-78, 1999. ,
DOI : 10.1557/PROC-695-L3.1.1