P. Barrière-de, 26 2.1.2 Voies d'amélioration du contact métal-semi-conducteur, p.26

]. A. Bibliographie1, H. Tsumura, T. Koezuka, A. Ando, . Phys et al., Physique des semiconducteurs et des composants électroniques, Dunod, [9] A.-J. Attias, Tech. Ing., Mater. Fonct, pp.1210-4436, 1986.

]. G. Paasch, S. Scheinert, A. Herasimovich, I. Hörselmann, and T. Lindner, Characteristics and mechanisms of hysteresis in polymer field-effect transistors, physica status solidi (a), vol.104, issue.3, p.534, 2008.
DOI : 10.1002/pssa.200723400

]. M. Panzer and C. D. Frisbie, Organic Field-Effect Transistors, chapter Contact Effects in Organic Field-Effect Transistors, Org. Electron, vol.10, issue.11, pp.139-157, 2007.

Q. J. Cai, M. B. Chan-park, Q. Zhou, Z. S. Lu, C. M. Li et al., Self-assembled monolayers mediated charge injection for high performance bottom-contact poly(3,3?????????-didodecylquaterthiophene) thin-film transistors, Organic Electronics, vol.9, issue.6, p.936, 2008.
DOI : 10.1016/j.orgel.2008.06.014

]. Y. Jung, R. J. Kline, D. A. Fischer, E. K. Lin, M. Heeney et al., The Effect of Interfacial Roughness on the Thin Film Morphology and Charge Transport of High-Performance Polythiophenes, Advanced Functional Materials, vol.5, issue.5, p.742, 2008.
DOI : 10.1002/adfm.200701089

]. S. Steudel, S. De-vusser, S. De-jonge, D. Janssen, S. Verlaak et al., Influence of the dielectric roughness on the performance of pentacene transistors, Applied Physics Letters, vol.85, issue.19, p.4400, 2004.
DOI : 10.1063/1.1815042

]. K. Suemori, S. Uemura, M. Yoshida, S. Hoshino, N. Takada et al., Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors, Applied Physics Letters, vol.93, issue.3, p.33308, 2008.
DOI : 10.1063/1.2957987

]. D. Knipp, R. A. Street, and A. R. Volkel, Morphology and electronic transport of polycrystalline pentacene thin-film transistors, Applied Physics Letters, vol.82, issue.22, p.3907, 2003.
DOI : 10.1063/1.1578536

]. D. Knipp, R. A. Street, A. Volkel, and J. Ho, Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport, Journal of Applied Physics, vol.93, issue.1, p.347, 2003.
DOI : 10.1063/1.1525068

]. M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, M. Matsuzawa et al., Surface Potential Control of an Insulator Layer for the High Performance Organic FET, Synthetic Metals, vol.137, issue.1-3, p.967, 2003.
DOI : 10.1016/S0379-6779(02)00958-X

]. J. Gao, K. Asadi, J. B. Xu, and J. An, Controlling of the surface energy of the gate dielectric in organic field-effect transistors by polymer blend, Applied Physics Letters, vol.94, issue.9, p.93302, 2009.
DOI : 10.1063/1.3086894

S. Mun, J. Choi, K. H. Lee, K. Lee, and S. Im, Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface, Applied Physics Letters, vol.93, issue.23, p.233301, 2008.
DOI : 10.1063/1.3041634

]. Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang et al., Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor, Applied Physics Letters, vol.90, issue.13, p.132104, 2007.
DOI : 10.1063/1.2457776

]. C. Celle, C. Suspène, J. Simonato, S. Lenfant, M. Ternisien et al., Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors with amorphous semiconductor layer, Organic Electronics, vol.10, issue.1, p.119, 2009.
DOI : 10.1016/j.orgel.2008.10.007
URL : https://hal.archives-ouvertes.fr/hal-00361965

P. Stadler, A. M. Track, M. Ullah, H. Sitter, G. J. Matt et al., The role of the dielectric interface in organic transistors: A combined device and photoemission study, Organic Electronics, vol.11, issue.2, p.207, 2010.
DOI : 10.1016/j.orgel.2009.10.017

K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach et al., Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator, Journal of Applied Physics, vol.96, issue.11, p.6431, 2004.
DOI : 10.1063/1.1810205

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda et al., Control of carrier density by self-assembled monolayers in organic field-effect transistors, Nature Materials, vol.221, issue.5, p.317, 2004.
DOI : 10.1103/PhysRevB.38.2297

D. Kumaki, T. Umeda, S. Tokito, H. Kawaguchi, M. Taniguchi et al., Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface, Applied Physics Letters, vol.92, issue.9, pp.93309-093305, 2008.
DOI : 10.1063/1.2890853

]. L. Lan, J. Peng, M. Sun, J. Zhou, J. Zou et al., Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers, Organic Electronics, vol.10, issue.2, p.346, 2009.
DOI : 10.1016/j.orgel.2008.12.007

C. Yoon, A. Kim, T. J. Facchetti, and . Marks, Gate Dielectric Chemical Structure???Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors, Journal of the American Chemical Society, vol.128, issue.39, p.12851, 2006.
DOI : 10.1021/ja063290d

]. M. Egginger, S. Bauer, R. Schwödiauer, H. Neugebauer, and N. Sariciftci, Current versus gate voltage hysteresis in organic field effect transistors, Monatshefte f??r Chemie - Chemical Monthly, vol.19, issue.74, p.735, 2009.
DOI : 10.1007/s00706-009-0149-z

]. G. Gu, M. G. Kane, J. E. Doty, and A. H. Firester, Electron traps and hysteresis in pentacene-based organic thin-film transistors, Applied Physics Letters, vol.87, issue.24, p.243512, 2005.
DOI : 10.1063/1.2146059

]. G. Gu, M. G. Kane, and S. Mau, Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors, Journal of Applied Physics, vol.101, issue.1, p.14504, 2007.
DOI : 10.1063/1.2403241

N. Kirova and S. Brazovskii, Contact kinetics in conducting polymers, Synthetic Metals, vol.76, issue.1-3, p.229, 1996.
DOI : 10.1016/0379-6779(95)03459-W

D. K. Hwang, K. Lee, J. H. Kim, S. Im, J. H. Park et al., Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors, Applied Physics Letters, vol.89, issue.9, p.93507, 2006.
DOI : 10.1063/1.2345243

J. H. Cho, J. Lee, Y. Xia, B. Kim, Y. He et al., Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors??on??plastic, Nature Materials, vol.19, issue.11, p.900, 2008.
DOI : 10.1038/nmat2291

]. E. Orgiu, S. Locci, B. Fraboni, E. Scavetta, P. Lugli et al., Analysis of the hysteresis in organic thin-film transistors with polymeric gate dielectric, Organic Electronics, vol.12, issue.3, p.477, 2011.
DOI : 10.1016/j.orgel.2010.12.014

C. A. Lee, D. W. Park, S. H. Jin, I. H. Park, J. D. Lee et al., Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator, Applied Physics Letters, vol.88, issue.25, p.252102, 2006.
DOI : 10.1063/1.2213969

K. H. Lee, G. Lee, K. Lee, M. S. Oh, and S. Im, Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer, Applied Physics Letters, vol.94, issue.9, p.93304, 2009.
DOI : 10.1063/1.3089379

K. Baeg, Y. Noh, J. Ghim, B. Lim, and D. Kim, Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory, Advanced Functional Materials, vol.89, issue.22, p.3678, 2008.
DOI : 10.1002/adfm.200800378

]. K. Suemori, S. Uemura, M. Yoshida, S. Hoshino, T. Kodzasa et al., Reduction of threshold voltage fluctuation for organic field effect transistors by increase of insulator capacitance, Thin Solid Films, vol.516, issue.9, p.2739, 2008.
DOI : 10.1016/j.tsf.2007.04.064

]. C. Bartic, H. Jansen, A. Campitelli, and S. Borghs, Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors, Organic Electronics, vol.3, issue.2, p.65, 2002.
DOI : 10.1016/S1566-1199(02)00034-4

]. J. Veres, S. Ogier, S. Leeming, D. Cupertino, and S. M. Khaffaf, Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors, Advanced Functional Materials, vol.13, issue.3, p.199, 2003.
DOI : 10.1002/adfm.200390030

H. S. Tan, N. Mathews, T. Cahyadi, F. R. Zhu, and S. G. Mhaisalkar, The effect of dielectric constant on device mobilities of high-performance, flexible organic field effect transistors, Applied Physics Letters, vol.94, issue.26, p.263303, 2009.
DOI : 10.1063/1.3168523

Z. Yuan, S. Xu, F. Zhao, X. Zhang, N. Jia et al., Composition influence of SiNx gate insulator fabricated by radio frequency (RF) Magnetron sputtering on characteristics of organic thin-film transistors, Applied Surface Science, vol.255, issue.11, p.5995, 2009.
DOI : 10.1016/j.apsusc.2009.01.053

W. H. Ha, M. H. Choo, and S. Im, Electrical properties of Al2O3 film deposited at low temperatures, Journal of Non-Crystalline Solids, vol.303, issue.1, p.78, 2002.
DOI : 10.1016/S0022-3093(02)00968-7

L. A. Majewski, M. Grell, S. D. Ogier, and J. Veres, A novel gate insulator for flexible electronics, Organic Electronics, vol.4, issue.1, p.27, 2003.
DOI : 10.1016/S1566-1199(03)00005-3

R. P. Ortiz, A. Facchetti, and T. J. Marks, Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors, Chemical Reviews, vol.110, issue.1, p.205, 2010.
DOI : 10.1021/cr9001275

G. Wang, D. Moses, A. J. Heeger, H. Zhang, M. Narasimhan et al., Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator, Journal of Applied Physics, vol.95, issue.1, p.316, 2004.
DOI : 10.1063/1.1630693

]. Deman, M. Erouel, D. Lallemand, M. Phaner-goutorbe, P. Lang et al., Growth related properties of pentacene thin film transistors with different gate dielectrics, Journal of Non-Crystalline Solids, vol.354, issue.15-16, p.1598, 2008.
DOI : 10.1016/j.jnoncrysol.2007.10.027

J. Tardy, M. Erouel, A. Deman, A. Gagnaire, V. Teodorescu et al., Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol???gel, Microelectronics Reliability, vol.47, issue.2-3, p.372, 2007.
DOI : 10.1016/j.microrel.2006.01.012

S. Kang, K. Chung, D. Park, H. Kim, Y. Choi et al., Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator, Synthetic Metals, vol.146, issue.3, p.351, 2004.
DOI : 10.1016/j.synthmet.2004.08.021

D. K. Hwang, J. H. Park, J. Lee, J. Choi, J. H. Kim et al., Pentacene-Based TTFTs with Polymer Gate Dielectric and NiO[sub x] Electrodes, Electrochemical and Solid-State Letters, vol.8, issue.6, p.140, 2005.
DOI : 10.1149/1.1897350

Y. Noh and H. Sirringhaus, Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors, Organic Electronics, vol.10, issue.1, p.174, 2009.
DOI : 10.1016/j.orgel.2008.10.021

G. W. Kang, K. M. Park, J. H. Song, C. H. Lee, and D. H. Hwang, The electrical characteristics of pentacene-based organic field-effect transistors with polymer gate insulators, Current Applied Physics, vol.5, issue.4, p.297, 2005.
DOI : 10.1016/j.cap.2004.02.012

B. Park, I. In, P. Gopalan, P. G. Evans, S. King et al., Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene, Applied Physics Letters, vol.92, issue.13, p.133302, 2008.
DOI : 10.1063/1.2904964

M. Yoon, H. Yan, A. Facchetti, and T. J. Marks, Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics, Journal of the American Chemical Society, vol.127, issue.29, p.10388, 2005.
DOI : 10.1021/ja052488f

L. Chua, P. K. Ho, H. Sirringhaus, and R. H. Friend, High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors, Applied Physics Letters, vol.84, issue.17, p.3400, 2004.
DOI : 10.1063/1.1710716

W. L. Kalb, T. Mathis, S. Haas, A. F. Stassen, and B. Batlogg, Organic small molecule field-effect transistors with Cytop??? gate dielectric: Eliminating gate bias stress effects, Applied Physics Letters, vol.90, issue.9, p.92104, 2007.
DOI : 10.1063/1.2709894

]. M. Uno, Y. Tominari, and J. Takeya, Fabrication of high-mobility organic single-crystal field-effect transistors with amorphous fluoropolymer gate insulators, Organic Electronics, vol.9, issue.5, p.753, 2008.
DOI : 10.1016/j.orgel.2008.05.008

]. J. Jang, J. W. Kim, N. Park, and J. Kim, Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator, Organic Electronics, vol.9, issue.4, p.481, 2008.
DOI : 10.1016/j.orgel.2008.02.011

T. Umeda, D. Kumaki, and S. Tokito, High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators, Organic Electronics, vol.9, issue.4, pp.545-104509, 2008.
DOI : 10.1016/j.orgel.2008.02.015

]. D. Boudinet, M. Benwadih, S. Altazin, R. Gwoziecki, J. Verilhac et al., Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors, Organic Electronics, vol.11, issue.2, p.291, 2010.
DOI : 10.1016/j.orgel.2009.11.008

C. R. Newman, R. J. Chesterfield, M. J. Panzer, and C. D. Frisbie, High mobility top-gated pentacene thin-film transistors, Journal of Applied Physics, vol.98, issue.8, p.84506, 2005.
DOI : 10.1063/1.2076429

N. Kawasaki, W. L. Kalb, T. Mathis, Y. Kaji, R. Mitsuhashi et al., Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties, Applied Physics Letters, vol.96, issue.11, p.113305, 2010.
DOI : 10.1063/1.3360223

]. Y. Kubozono, S. Haas, W. L. Kalb, P. Joris, F. Meng et al., High-performance C60 thin-film field-effect transistors with parylene gate insulator, Applied Physics Letters, vol.93, issue.3, p.33316, 2008.
DOI : 10.1063/1.2959819

D. Simeone, S. Cipolloni, L. Mariucci, M. Rapisarda, A. Minotti et al., Pentacene TFTs with parylene passivation layer, Thin Solid Films, vol.517, issue.23, p.6283, 2009.
DOI : 10.1016/j.tsf.2009.02.088

N. Vladu, M. Marjanovic, G. Bodea, A. M. Hernandez-sosa, R. Ramil et al., Small-molecule vacuum processed melamine-C60, organic field-effect transistors, Organic Electronics, vol.10, issue.3, p.408, 2009.
DOI : 10.1016/j.orgel.2009.01.002

H. Klauk, U. Zschieschang, and M. Halik, Low-voltage organic thin-film transistors with large transconductance, Journal of Applied Physics, vol.102, issue.7, p.74514, 2007.
DOI : 10.1063/1.2794702

S. C. Lim, S. H. Kim, J. H. Lee, M. K. Kim, D. J. Kim et al., Surface-treatment effects on organic thin-film transistors, Synthetic Metals, vol.148, issue.1, p.75, 2005.
DOI : 10.1016/j.synthmet.2004.08.034

]. W. Kalb, P. Lang, M. Mottaghi, H. Aubin, G. Horowitz et al., Structure???performance relationship in pentacene/Al2O3 thin-film transistors, Synthetic Metals, vol.146, issue.3, p.279, 2004.
DOI : 10.1016/j.synthmet.2004.08.018

D. H. Kim, H. S. Lee, H. Yang, L. Yang, and K. Cho, Tunable Crystal Nanostructures of Pentacene Thin Films on Gate Dielectrics Possessing Surface-Order Control, Advanced Functional Materials, vol.68, issue.9, p.1363, 2008.
DOI : 10.1002/adfm.200701019

Y. Wu, P. Liu, B. S. Ong, T. Srikumar, N. Zhao et al., Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors, Applied Physics Letters, vol.86, issue.14, p.142102, 2005.
DOI : 10.1063/1.1894597

I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Modification of the electric conduction at the pentacene???SiO2 interface by surface termination of SiO2, Applied Physics Letters, vol.86, issue.10, p.103502, 2005.
DOI : 10.1063/1.1875749

L. Fumagalli, D. Natali, M. Sampietro, E. Peron, F. Perissinotti et al., <mml:math altimg="si84.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Al</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>O</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> as gate dielectric for organic transistors: Charge transport phenomena in poly-(3-hexylthiophene) based devices, Organic Electronics, vol.9, issue.2, p.198, 2008.
DOI : 10.1016/j.orgel.2007.11.001

Y. Sun, X. Lu, S. Lin, J. Kettle, S. G. Yeates et al., Polythiophene-based field-effect transistors with enhanced air stability, Organic Electronics, vol.11, issue.2, p.351, 2010.
DOI : 10.1016/j.orgel.2009.10.019

A. Deman and J. Tardy, PMMA???Ta2O5 bilayer gate dielectric for low operating voltage organic FETs, Organic Electronics, vol.6, issue.2, p.78, 2005.
DOI : 10.1016/j.orgel.2005.03.002

Y. Lu, W. H. Lee, H. S. Lee, Y. Jang, and K. Cho, Low-voltage organic transistors with titanium oxide/polystyrene bilayer dielectrics, Applied Physics Letters, vol.94, issue.11, p.113303, 2009.
DOI : 10.1063/1.3097010

C. Kim, A. Facchetti, and T. Marks, Gate Dielectric Microstructural Control of Pentacene Film Growth Mode and Field-Effect Transistor Performance, Advanced Materials, vol.100, issue.18, p.2561, 2007.
DOI : 10.1002/adma.200700101

F. Chen and C. Liao, Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics, Applied Physics Letters, vol.93, issue.10, p.103310, 2008.
DOI : 10.1063/1.2980421

]. F. Maddalena, M. Spijkman, J. Brondijk, P. Fonteijn, F. Brouwer et al., Device characteristics of polymer dual-gate field-effect transistors, Organic Electronics, vol.9, issue.5, p.839, 2008.
DOI : 10.1016/j.orgel.2008.06.004

Q. Tang, Y. Tong, H. Li, Z. Ji, L. Li et al., High-Performance Air-Stable Bipolar Field-Effect Transistors of Organic Single-Crystalline Ribbons with an Air-Gap Dielectric, Advanced Materials, vol.86, issue.8, p.1511, 2008.
DOI : 10.1002/adma.200702145

J. K. Ko, D. Y. Kim, J. H. Park, S. Choi, S. H. Park et al., The properties of fluoride/glass and fluoride/silicon, Thin Solid Films, vol.427, issue.1-2, p.259, 2003.
DOI : 10.1016/S0040-6090(02)01199-9

R. P. Lowndes and J. Phys, C: Solid State Phys, p.1595, 1969.

N. Benson, C. Melzer, R. Schmechel, and H. V. Seggern, Electronic states at the dielectric/semiconductor interface in organic field effect transistors, physica status solidi (a), vol.89, issue.134, p.475, 2008.
DOI : 10.1002/pssa.200723421

G. W. Mbise, G. A. Niklasson, and C. G. Granqvist, Scaling of surface roughness in evaporated calcium fluoride films, Solid State Communications, vol.97, issue.11, p.965, 1996.
DOI : 10.1016/0038-1098(95)00749-0

]. K. Thompson, D. Luhman, and R. Hallock, Study of the effect of initial conditions on the scaling properties of CaF2 thin films, Surface Science, vol.603, issue.21, p.3249, 2009.
DOI : 10.1016/j.susc.2009.09.015

X. Guo and J. Maier, Multilayer Heterostructures, Advanced Functional Materials, vol.90, issue.1, p.96, 2009.
DOI : 10.1002/adfm.200800805

N. S. Sokolov, I. V. Grekhov, S. Ikeda, A. K. Kaveev, A. V. Krupin et al., Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111), Microelectronic Engineering, vol.84, issue.9-10, p.2247, 2007.
DOI : 10.1016/j.mee.2007.04.065

S. Yu, M. Yi, and D. Ma, Copper phthalocyanine organic thin-film transistors with calcium fluoride gate insulator, Semiconductor Science and Technology, vol.21, issue.10, p.1452, 2006.
DOI : 10.1088/0268-1242/21/10/015

G. Horowitz, R. Hajlaoui, and P. Delannoy, Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the Density of Traps, Journal de Physique III, vol.5, issue.4, p.355, 1995.
DOI : 10.1051/jp3:1995132
URL : https://hal.archives-ouvertes.fr/jpa-00249316

A. S. Foster, T. Trevethan, and A. L. Shluger, Structure and diffusion of intrinsic defects, adsorbed hydrogen, and water molecules at the surface of alkali-earth fluorides calculated using density functional theory, Physical Review B, vol.80, issue.11, p.115421, 2009.
DOI : 10.1103/PhysRevB.80.115421

O. D. Jurchescu, J. Baas, and T. T. Palstra, Effect of impurities on the mobility of single crystal pentacene, Applied Physics Letters, vol.84, issue.16, p.3061, 2004.
DOI : 10.1063/1.1704874

L. Gross, F. Mohn, N. Moll, P. Liljeroth, and G. Meyer, The Chemical Structure of a Molecule Resolved by Atomic Force Microscopy, Science, vol.325, issue.5944, p.1110, 2009.
DOI : 10.1126/science.1176210

I. P. Bouchoms, W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates, Synthetic Metals, vol.104, issue.3, p.175, 1999.
DOI : 10.1016/S0379-6779(99)00050-8

R. Ruiz, A. C. Mayer, G. G. Malliaras, B. Nickel, G. Scoles et al., Structure of pentacene thin films, Applied Physics Letters, vol.85, issue.21, p.4926, 2004.
DOI : 10.1063/1.1826229

C. D. Dimitrakopoulos, A. R. Brown, and A. Pomp, Molecular beam deposited thin films of pentacene for organic field effect transistor applications, Journal of Applied Physics, vol.80, issue.4, p.2501, 1996.
DOI : 10.1063/1.363032

R. Ruiz, D. Choudhary, B. Nickel, T. Toccoli, K. Chang et al., Pentacene Thin Film Growth, Chemistry of Materials, vol.16, issue.23, p.4497, 2004.
DOI : 10.1021/cm049563q

A. C. Mayer, R. Ruiz, R. L. Headrick, A. Kazimirov, and G. G. Malliaras, Early stages of pentacene film growth on silicon oxide, Organic Electronics, vol.5, issue.5, p.257, 2004.
DOI : 10.1016/j.orgel.2004.05.001

R. Ruiz, A. Papadimitratos, A. C. Mayer, and G. G. Malliaras, Thickness Dependence of Mobility in Pentacene Thin-Film Transistors, Advanced Materials, vol.17, issue.14, p.1795, 2005.
DOI : 10.1002/adma.200402077

X. Zhang, S. P. Tiwari, and B. Kippelen, Pentacene organic field-effect transistors with polymeric dielectric interfaces: Performance and stability, Organic Electronics, vol.10, issue.6, p.1133, 2009.
DOI : 10.1016/j.orgel.2009.06.001

I. Kymissis, C. Dimitrakopoulos, and S. Purushothaman, High-performance bottom electrode organic thin-film transistors, IEEE Transactions on Electron Devices, vol.48, issue.6, p.1060, 2001.
DOI : 10.1109/16.925226

Y. Hu, Q. Qi, and C. Jiang, Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors, Applied Physics Letters, vol.96, issue.13, p.133311, 2010.
DOI : 10.1063/1.3374887

Y. Lin, D. Gundlach, S. Nelson, and T. Jackson, Pentacene-based organic thin-film transistors, IEEE Transactions on Electron Devices, vol.44, issue.8, p.1325, 1997.
DOI : 10.1109/16.605476

D. Simeone, M. Rapisarda, G. Fortunato, A. Valletta, and L. Mariucci, Influence of structural properties on environmental stability of pentacene thin film transistors, Organic Electronics, vol.12, issue.3, p.447, 2011.
DOI : 10.1016/j.orgel.2010.12.013

A. Benor, A. Hoppe, V. Wagner, and D. Knipp, Electrical stability of pentacene thin film transistors, Organic Electronics, vol.8, issue.6, p.749, 2007.
DOI : 10.1016/j.orgel.2007.06.005

A. Petrovic and G. Bratina, Interface resistivity and lifetime of thin film transistors exposed to ambient air, Applied Physics Letters, vol.94, issue.12, p.123301, 2009.
DOI : 10.1063/1.3105984

Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Xie et al., H2O effect on the stability of organic thin-film field-effect transistors, Applied Physics Letters, vol.83, issue.8, p.1644, 2003.
DOI : 10.1063/1.1604193

T. H. Kim, C. G. Han, and C. K. Song, Instability of threshold voltage under constant bias stress in pentacene thin film transistors employing polyvinylphenol gate dielectric, Thin Solid Films, vol.516, issue.6, p.1232, 2008.
DOI : 10.1016/j.tsf.2007.06.008

M. Debucquoy, S. Verlaak, S. Steudel, K. Myny, J. Genoe et al., Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors, Applied Physics Letters, vol.91, issue.10, p.103508, 2007.
DOI : 10.1063/1.2777177

A. Benor, D. Knipp, J. Northrup, A. Völkel, and R. Street, Influence of gap states on the electrical stability of pentacene thin film transistors, Journal of Non-Crystalline Solids, vol.354, issue.19-25, p.2875, 2008.
DOI : 10.1016/j.jnoncrysol.2007.10.093

A. Sharma, S. G. Mathijssen, M. Kemerink, D. M. De-leeuw, and P. A. Bobbert, Proton migration mechanism for the instability of organic field-effect transistors, Applied Physics Letters, vol.95, issue.25, p.253305, 2009.
DOI : 10.1063/1.3275807

.. Comparaison-des-deux-architectures, Par jet de matière : vers une technologie OTFT imprimés, Performances, p.112

B. Shur, D. J. Gundlach, and T. N. Jackson, [3] V. S. Fomenko, Handbook of thermionic properties: electronic work functions and Richardson constants of elements and compounds Solid-State Electron, Impression par jet de matière de transistors organiques sur support souple, pp.3084-259, 1966.

J. Zaumseil, K. W. Baldwin, and J. A. Rogers, Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination, Journal of Applied Physics, vol.93, issue.10, p.6117, 2003.
DOI : 10.1063/1.1568157

.. Sur-fluorure-de-calcium, 139 1.4.2.1 CaF2 (1 nm), p.139

.. Allure-générale-des-courbes, 147 2.2.1.1 Caractéristiques de sortie, p.147

V. Stockage-sous, 155 2.3.1.2 Stockage à l'air, p.157

V. Stockage-sous, 157 2.3.2.2 Stockage à l'air, p.158

V. Stockage-sous, 159 2.3.3.2 Stockage à l'air, p.160

V. Stockage-sous, 161 2.3.4.2 Stockage à l'air, p.162

C. Encapsulation, 164 2.4.2 Rapport Ion, p.166

C. Dérive-sous, 167 2.5.1 Stress à l'état passant (VG = -80 V) Ajustement des courbes d'évolution de la tension de seuil en fonction du temps, p.169

]. R. Bibliographie1, J. Lowndes, ]. S. Phys, M. Yu, D. M. Yi et al., C: Solid State Phys [3] C. Sire, Propriétés électriques à l'échelle nanométrique des diélectriques dans les structures MIM et MOS, Thin Solid Films Philos. Trans. R. Soc. London J. Appl. Polym. Sci. J. Adhes, vol.2, issue.2, pp.1595-1741, 1805.

S. Y. Yang, K. Shin, and C. E. Park, The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics, Advanced Functional Materials, vol.4466, issue.11, p.1806, 2005.
DOI : 10.1002/adfm.200400486

C. Ucurum, H. Goebel, F. A. Yildirim, W. Bauhofer, and W. Krautschneider, Hole trap related hysteresis in pentacene field-effect transistors, Journal of Applied Physics, vol.104, issue.8, p.84501, 2008.
DOI : 10.1063/1.2999643

]. D. Kumaki, T. Umeda, and S. Tokito, Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface, Applied Physics Letters, vol.92, issue.9, p.93309, 2008.
DOI : 10.1063/1.2890853

]. D. Simeone, M. Rapisarda, G. Fortunato, A. Valletta, and L. Mariucci, Influence of structural properties on environmental stability of pentacene thin film transistors, Organic Electronics, vol.12, issue.3, p.447, 2011.
DOI : 10.1016/j.orgel.2010.12.013

]. L. Mariucci, S. Cipolloni, D. Simeone, M. Cuscuna, L. Maiolo et al., Water-Related Instabilities in Pentacene Thin-Film Transistors, Journal of the Korean Physical Society, vol.54, issue.925, p.505, 2009.
DOI : 10.3938/jkps.54.505

]. A. Sharma, S. G. Mathijssen, M. Kemerink, D. M. De-leeuw, and P. A. Bobbert, Proton migration mechanism for the instability of organic field-effect transistors, Applied Physics Letters, vol.95, issue.25, p.253305, 2009.
DOI : 10.1063/1.3275807

K. Ryu, I. Nausieda, D. He, A. Akinwande, V. Bulovic et al., Bias-Stress Effect in Pentacene Organic Thin-Film Transistors, IEEE Transactions on Electron Devices, vol.57, issue.5, p.1003, 2010.
DOI : 10.1109/TED.2010.2044282