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Optimisation numérique de cellules solaires à très haut rendement à base d’InGaN

Abstract : In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the realization of optoelectronic devices, because of its wide spectral coverage, with a bandgap that can be modulated, by changing the indium composition, between 0.7 eV and 3.4 eV. This allows the absorption of a large part of the solar spectrumand makes the InGaN alloy an excellent candidate for the realization of high efficiency multi-junction solar cells. This thesis work led to a further investigation into the performance of different InGaN-based solar cell structures. It is part of a project aiming to associate mathematical optimization methods with a rigorous simulation process based as much as possible on models and experimental results. This is a new optimization approach that optimizes the performance of solar cells by simultaneously optimizing several parameters (physical and geometrical) of the solar cell. We have studied for this thesis, different structures of single junction solar cells, including new structures without P layer and we have also studied a complex structure with double junction. These studies allowed us to evaluate the optimal performance that InGaN-based solar cells can achieve for their design and future development
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Submitted on : Friday, September 7, 2018 - 12:10:06 PM
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Document(s) archivé(s) le : Saturday, December 8, 2018 - 4:15:47 PM


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Abdoulwahab Adaine. Optimisation numérique de cellules solaires à très haut rendement à base d’InGaN. Science des matériaux [cond-mat.mtrl-sci]. Université de Lorraine, 2018. Français. ⟨NNT : 2018LORR0085⟩. ⟨tel-01870260⟩



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