Fabrication of high-density Si and Si_xGe_1−x nanowire arrays based on the single step plasma etching process

Mickael Martin (1) , Sebastien Avertin (1) , Thierry Chevolleau (1) , Florian Dhalluin (1) , Maelig Ollivier (1) , Thierry Baron (1) , Olivier Joubert (1) , Jean-Michel Hartmann (2)

1 LTM - Laboratoire des technologies de la microélectronique
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Dense arrays of silicon and silicon germanium nanowires are fabricated using a top–down approach, which exploits the excellent patterning capabilities of inductively coupled plasmas. Using standard deep UV lithography on a previously deposited silicon oxide hard mask, silicon nanowires with straight and smooth sidewalls and a high aspect ratio greater than 60:1 can be obtained with SF₆/O₂/HBr/SiF₄ plasma chemistries. The best results are obtained using Cl₂/N₂ high-density plasmas to pattern Si_0.5Ge_0.5 nanowires with an aspect ratio of 10:1.

Domaines: Sciences de l'ingénieur [physics]

Mickael Martin, Sebastien Avertin, Thierry Chevolleau, Florian Dhalluin, Maelig Ollivier, et al.. Fabrication of high-density Si and Si_xGe_1−x nanowire arrays based on the single step plasma etching process. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2013, 31, pp.041806. ⟨10.1116/1.4812792⟩. ⟨hal-00925511⟩