Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

E. Simoen (1) , Bogdan Cretu (2) , W Fang , M. Aoulaiche (1) , Jean-Marc Routoure (2) , Régis Carin (2) , J Luo , Chao Zhao (3) , Cor Claeys (1)

1 IMEC - IMEC
2 Equipe Electronique - Laboratoire GREYC - UMR6072
3 CAS - Chinese Academy of Sciences [Changchun Branch]

a [e-mail], b [e-mail], c [e-mail], d [e-mail], e [e-mail], f [e-mail], g Abstract. The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

Mots clés: Random Telegraph Signal; silicon-on-insulator; gate oxide trap; metal-oxide- semiconductor field-effect transistor; generation-recombination noise

Domaines: Electronique

E. Simoen, Bogdan Cretu, W Fang, M. Aoulaiche, Jean-Marc Routoure, et al.. Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices. Solid State Phenomena, 2016, 242, pp.449. ⟨10.4028/www.scientific.net/SSP.242.449⟩. ⟨hal-01196556⟩