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Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths

Delphine Wolfersberger 1 Naima Khelfaoui 1 Cristian Dan 1 Nicolas Fressengeas 1 Hervé Leblond 2
1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 POMA - Propriétés Optiques des Matériaux et Applications
Abstract : Photorefractive beam self-trapping is investigated in InP:Fe and is shown to occur within tens of microseconds after beam switch on. This fast response time is predicted by an analytical theoretical interpretation based on a simple photorefraction model which suggests buildups in a time range consistent with experiments.
Keywords : semiconductors indium compounds iron optical self-focusing photorefractive effect photorefractive materials
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Journal articles
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https://hal-supelec.archives-ouvertes.fr/hal-00216680
Contributor : Sébastien van Luchene Connect in order to contact the contributor
Submitted on : Friday, January 25, 2008 - 9:20:53 AM
Last modification on : Wednesday, October 20, 2021 - 3:18:40 AM

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SUP_OPTEL | CNRS | UNIV-ANGERS | SUPELEC | CENTRALESUPELEC | UNIV-LORRAINE | SUP_LMOPS | LMOPS-PHOTONIQUE | EC-PARIS

Citation

Delphine Wolfersberger, Naima Khelfaoui, Cristian Dan, Nicolas Fressengeas, Hervé Leblond. Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths. Applied Physics Letters, American Institute of Physics, 2008, 92 (2), pp.021106-1-3. ⟨10.1063/1.2830989⟩. ⟨hal-00216680⟩

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