Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths

Abstract : Photorefractive beam self-trapping is investigated in InP:Fe and is shown to occur within tens of microseconds after beam switch on. This fast response time is predicted by an analytical theoretical interpretation based on a simple photorefraction model which suggests buildups in a time range consistent with experiments.
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https://hal-supelec.archives-ouvertes.fr/hal-00216680
Contributor : Sébastien van Luchene <>
Submitted on : Friday, January 25, 2008 - 9:20:53 AM
Last modification on : Friday, May 10, 2019 - 1:02:02 PM

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Delphine Wolfersberger, Naima Khelfaoui, Cristian Dan, Nicolas Fressengeas, Hervé Leblond. Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths. Applied Physics Letters, American Institute of Physics, 2008, 92 (2), pp.021106-1-3. ⟨10.1063/1.2830989⟩. ⟨hal-00216680⟩

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