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Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single transverse mode large diameter (50µm) 1.55µm InP-based electrically-pumped VECSELs

Adel Bousseksou 1 Sophie Bouchoule 1 Martin Strassner 1 Isabelle Sagnes 1 Joel Jacquet 2 Paul Crozat 3
1 LPN - Laboratoire de photonique et de nanostructures
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 IEF - Institut d'électronique fondamentale
Abstract : We compared buried (BTJ) and ion implanted tunnel junction (ITJ) as current confinement schemes for 1550nm ½-VCSELs. Reduced thermal resistance is obtained for BJT, but reduced current crowding is evidenced for ITJ. Singletransverse mode laser emission is obtained from large diameters devices.
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Conference papers
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https://hal-supelec.archives-ouvertes.fr/hal-00250093
Contributor : Sébastien van Luchene <>
Submitted on : Saturday, February 9, 2008 - 9:18:49 PM
Last modification on : Wednesday, September 16, 2020 - 4:53:34 PM

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SUP_OPTEL | CNRS | SUPELEC | UNIV-LORRAINE

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Adel Bousseksou, Sophie Bouchoule, Martin Strassner, Isabelle Sagnes, Joel Jacquet, et al.. Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single transverse mode large diameter (50µm) 1.55µm InP-based electrically-pumped VECSELs. IEEE Leos annual meeting, Oct 2006, Montréal, Canada. pp.516-517, ⟨10.1109/LEOS.2006.278746⟩. ⟨hal-00250093⟩

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